Vishay TrenchFET Type N-Channel MOSFET, 45.5 A, 30 V Enhancement, 8-Pin SO-8 SIRA88DP-T1-GE3
- RS-stocknr.:
- 134-9696
- Fabrikantnummer:
- SIRA88DP-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 15,30
(excl. BTW)
€ 18,525
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,612 | € 15,30 |
| 250 - 600 | € 0,597 | € 14,93 |
| 625 - 1225 | € 0,582 | € 14,55 |
| 1250 - 2475 | € 0,566 | € 14,15 |
| 2500 + | € 0,554 | € 13,85 |
*prijsindicatie
- RS-stocknr.:
- 134-9696
- Fabrikantnummer:
- SIRA88DP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Maximum Power Dissipation Pd | 25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Maximum Power Dissipation Pd 25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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