Infineon HEXFET N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF
- RS-stocknr.:
- 145-8642
- Fabrikantnummer:
- IRFU4510PBF
- Fabrikant:
- Infineon
Subtotaal (1 tube van 75 eenheden)*
€ 112,275
(excl. BTW)
€ 135,825
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 75 + | € 1,497 | € 112,28 |
*prijsindicatie
- RS-stocknr.:
- 145-8642
- Fabrikantnummer:
- IRFU4510PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 13.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 143 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 2.39mm | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 54 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Height | 6.22mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 13.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 143 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 2.39mm | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 54 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Height 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- MX
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