Infineon HEXFET Type N-Channel MOSFET, 71 A, 60 V, 3-Pin IPAK IRFU7546PBF
- RS-stocknr.:
- 218-3126
- Fabrikantnummer:
- IRFU7546PBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 16,74
(excl. BTW)
€ 20,26
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 21 juli 2027
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 20 | € 0,837 | € 16,74 |
| 40 - 80 | € 0,768 | € 15,36 |
| 100 - 220 | € 0,709 | € 14,18 |
| 240 - 480 | € 0,657 | € 13,14 |
| 500 + | € 0,639 | € 12,78 |
*prijsindicatie
- RS-stocknr.:
- 218-3126
- Fabrikantnummer:
- IRFU7546PBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.9mΩ | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 99W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.9mΩ | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 99W | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon HEXFET series N-Channel power MOSFET. It is used for applications where switching is below <100KHz.
Lead-free, RoHS compliant
Enhanced body diode dV/dt and dI/dt capability
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