IXYS Single HiperFET, Q3-Class 1 N-Channel MOSFET, 38 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN44N100Q3
- RS-stocknr.:
- 168-4755
- Fabrikantnummer:
- IXFN44N100Q3
- Fabrikant:
- IXYS
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 168-4755
- Fabrikantnummer:
- IXFN44N100Q3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Transistor Configuration | Single | |
| Series | HiperFET, Q3-Class | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 38 A | |
| Maximum Drain Source Voltage (Vds) | 1 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 4 | |
| Package Type | SOT-227 | |
| Height | 9.6 mm | |
| Length | 38.23 mm | |
| Maximum Drain Source Resistance (Rds) | 220 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 30 V, -30 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 960 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Screw | |
| Width | 25.07 mm | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Transistor Configuration Single | ||
Series HiperFET, Q3-Class | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 38 A | ||
Maximum Drain Source Voltage (Vds) 1 kV | ||
Channel Mode Enhancement | ||
Pin Count 4 | ||
Package Type SOT-227 | ||
Height 9.6 mm | ||
Length 38.23 mm | ||
Maximum Drain Source Resistance (Rds) 220 mΩ | ||
Maximum Gate Source Voltage (Vgs) 30 V, -30 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 960 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Screw | ||
Width 25.07 mm | ||
- Land van herkomst:
- US
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Gerelateerde Links
- IXYS HiperFET 63 A 4-Pin SOT-227
- IXYS HiperFET 28 A 4-Pin SOT-227
- IXYS HiperFET 37 A 4-Pin SOT-227
- IXYS HiperFET 82 A 4-Pin SOT-227
- IXYS HiperFET 63 A 4-Pin SOT-227 IXFN80N50Q3
- IXYS HiperFET 28 A 4-Pin SOT-227 IXFN32N100Q3
- IXYS HiperFET 37 A 4-Pin SOT-227 IXFN44N80Q3
- IXYS HiperFET 82 A 4-Pin SOT-227 IXFN100N50Q3