Vishay IRFU420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin IPAK

Subtotaal (1 rol van 3000 eenheden)*

€ 2.469,00

(excl. BTW)

€ 2.988,00

(incl. BTW)

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  • Verzending vanaf 03 december 2026
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RS-stocknr.:
146-4434
Fabrikantnummer:
IRFU420PBF
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

500V

Series

IRFU420

Package Type

IPAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

42W

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

19nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.39mm

Length

6.73mm

Standards/Approvals

RoHS

Width

6.22mm

Automotive Standard

No

Vishay IRFU420 Series Power MOSFET, 500V Maximum Drain Source Voltage, 2.4A Maximum Continuous Drain Current - IRFU420PBF


This power MOSFET is a high-voltage switching transistor designed for surface-mounted power conversion and control tasks in industrial systems. It operates as an N-channel enhancement-mode device suited to applications requiring elevated drain-source voltage handling and moderate continuous current, with an IPAK 3-pin package intended for Compact board-level integration.

Features and Benefits:


• 500V drain-source withstand for high-voltage switching capability • 3 Ω RDS(on) for predictable on-state conduction losses • 2.4 A continuous drain current for sustained load operation • 19 nC typical gate charge to aid switching energy estimation • 42W maximum power dissipation for thermal design margin • -55 °C to 150 °C operating range for wide thermal environments

Applications


• Suitable for industrial motor-drive gate switching stages • Ideal for high-voltage switch-mode power supplies • Used for line-voltage protection and snubber circuits • Can be used in automation control relays and drivers

What gate voltage limits should be observed during design?


Keep gate excursions within ±20V relative to source to prevent gate-oxide overstress and ensure long-term switching reliability.

How should thermal constraints be managed on the PCB?


Use adequate copper area and thermal vias to dissipate up to 42 W, and evaluate junction-to-ambient resistance for your cooling strategy.

What switching performance considerations arise from the gate charge?


Budget driver current and slew rates around the 19 nC gate charge Value to control switching losses and electromagnetic emissions during transitions.

Are there specific mounting recommendations for reliable operation?


As a surface-mount IPAK device, ensure secure solder joints and an appropriate footprint for heat spreading to maintain temperature within the -55 °C to 150 °C operational band.

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