Fabrikantnummer

Infineon OptiMOS™ 3 N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TSDSON BSZ12DN20NS3GATMA1

RS-stocknr.:: 165-6894
Fabrikantnummer:: BSZ12DN20NS3GATMA1
Fabrikant:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TSDSON BSZ12DN20NS3GATMA1

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RS-stocknr.:: 165-6894
Fabrikantnummer:: BSZ12DN20NS3GATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	11.3 A
	Maximum Drain Source Voltage	200 V
	Package Type	TSDSON
	Series	OptiMOS™ 3
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	125 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	50 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	3.4mm
	Width	3.4mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	6.5 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	1.1mm

	Alles selecteren
	Merk Infineon
	Channel Type N
	Maximum Continuous Drain Current 11.3 A
	Maximum Drain Source Voltage 200 V
	Package Type TSDSON
	Series OptiMOS™ 3
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 125 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 50 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 3.4mm
	Width 3.4mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 6.5 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 1.1mm

N.v.t.

Land van herkomst:: CN

Infineon OptiMOS™ 3 N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TSDSON BSZ12DN20NS3GATMA1

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