Toshiba Single TK 1 N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-220 TK40E06N1
- RS-stocknr.:
- 168-7778
- Fabrikantnummer:
- TK40E06N1
- Fabrikant:
- Toshiba
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 168-7778
- Fabrikantnummer:
- TK40E06N1
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Transistor Configuration | Single | |
| Series | TK | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 60 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | -1.2 V | |
| Height | 15.1 mm | |
| Length | 10.16 mm | |
| Maximum Drain Source Resistance (Rds) | 10.4 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -20 V, +20 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 67 W | |
| Mount Type | Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 23 nC | |
| Width | 4.45 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Transistor Configuration Single | ||
Series TK | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 60 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220 | ||
Automotive Standard No | ||
Forward Voltage (Vf) -1.2 V | ||
Height 15.1 mm | ||
Length 10.16 mm | ||
Maximum Drain Source Resistance (Rds) 10.4 mΩ | ||
Maximum Gate Source Voltage (Vgs) -20 V, +20 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 67 W | ||
Mount Type Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 23 nC | ||
Width 4.45 mm | ||
- Land van herkomst:
- JP
MOSFET Transistors, Toshiba
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