Infineon SPA20N60C3 Type N-Channel MOSFET, 20.7 A, 600 V Enhancement, 4-Pin TO-220 SPA20N60C3XKSA1

RS-stocknr.:: 170-2267
Fabrikantnummer:: SPA20N60C3XKSA1
Fabrikant:: Infineon

Infineon SPA20N60C3 Type N-Channel MOSFET, 20.7 A, 600 V Enhancement, 4-Pin TO-220 SPA20N60C3XKSA1

Subtotaal (1 tube van 50 eenheden)*

€ 157,05

(excl. BTW)

€ 190,05

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 100 stuk(s) vanaf 29 december 2025

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 +	€ 3,141	€ 157,05

*prijsindicatie

RS-stocknr.:: 170-2267
Fabrikantnummer:: SPA20N60C3XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20.7A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	SPA20N60C3
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	34.5W
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	87nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	16.15mm
	Standards/Approvals	No
	Width	4.85 mm
	Length	10.65mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20.7A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series SPA20N60C3
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 34.5W
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 87nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 16.15mm
	Standards/Approvals No
	Width 4.85 mm
	Length 10.65mm
	Automotive Standard No

Vrijgesteld

Infineon MOSFET

The Infineon TO-220FP-3 through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 34.5W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of use

• Field proven CoolMOM quality

• High efficiency and power density

• High peak current capability

• High reliability

• Improved transconductance

• Lead (Pb) free

• Low gate charge (Qg)

• Low specific on state resistance

• Operating temperature ranges between -55°C and 150°C

• Outstanding cost/performance

• Periodic avalanche rated

• Ultra low gate charge

• Very low energy storage in output capacitance (Eoss) 400V

Applications

• Adapter

• PC power

• Server power supplies

• Telecommunication

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC