Infineon BSC12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin TDSON BSC12DN20NS3GATMA1

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€ 11,28

(excl. BTW)

€ 13,65

(incl. BTW)

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50 - 90€ 1,072€ 10,72
100 - 240€ 0,964€ 9,64
250 - 490€ 0,867€ 8,67
500 +€ 0,826€ 8,26

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Verpakkingsopties
RS-stocknr.:
171-1952
Fabrikantnummer:
BSC12DN20NS3GATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Series

BSC12DN20NS3 G

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

6.5nC

Maximum Operating Temperature

150°C

Length

5.35mm

Standards/Approvals

No

Width

6.35 mm

Height

1.1mm

Automotive Standard

No

The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading Benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Highest efficiency

Highest power density

Lowest board space consumption

Minimal device paralleling required

System cost improvement

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