Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF

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Verpakkingsopties
RS-stocknr.:
831-2853
Fabrikantnummer:
IRF640NSTRLPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

67nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

9.65 mm

Length

10.67mm

Height

4.83mm

Distrelec Product Id

304-44-448

Automotive Standard

No

Land van herkomst:
KR

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NSTRLPBF


This MOSFET is essential for efficient power management across various applications, controlling electrical current flow in circuits to ensure performance and reliability. Its robust specifications make it particularly suitable for automation and electronic systems in contemporary electronics.

Features & Benefits


• N-channel configuration supports enhancement mode operation

• Maximum continuous drain current of 18A

• Peak drain-source voltage of 200V for diverse applications

• D2PAK package designed for surface mount convenience

• Low Rds(on) of 150mΩ reduces energy loss during operation

• High maximum operating temperature of +175°C for various environments

Applications


• Power management in automotive electronics

• Industrial power supplies for automation systems

• Motor control across different sectors

• Renewable energy systems for energy conversion

• High-frequency power inverter designs

What is the maximum drain-source voltage?


The maximum drain-source voltage rating is 200V, providing flexibility for high-voltage applications.

How is heat dissipation managed during operation?


This MOSFET offers a power dissipation capability of 150W, and its package design promotes effective heat management under high loads.

What are the implications of the gate threshold voltage range?


With a maximum gate threshold voltage of 4V and a minimum of 2V, it offers engineers a versatile range for switching applications.

Can this component be used in parallel configurations?


Yes, it can be easily paralleled due to its low on-resistance, making it suitable for high current applications.

How should it be soldered for optimal performance?


The soldering temperature should not exceed 300°C for 10 seconds to ensure proper installation without damaging the MOSFET.

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