Infineon OptiMOS 5 Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin TO-252

RS-stocknr.:: 178-7370
Fabrikantnummer:: IPD053N06NATMA1
Fabrikant:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin TO-252

Subtotaal (1 rol van 2500 eenheden)*

€ 1.037,50

(excl. BTW)

€ 1.255,00

(incl. BTW)

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Aantal stuks	Per stuk	Per rol*
2500 +	€ 0,415	€ 1.037,50

*prijsindicatie

RS-stocknr.:: 178-7370
Fabrikantnummer:: IPD053N06NATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS 5
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	27nC
	Maximum Power Dissipation Pd	83W
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Standards/Approvals	No
	Length	6.73mm
	Width	6.22mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS 5
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 27nC
	Maximum Power Dissipation Pd 83W
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Standards/Approvals No
	Length 6.73mm
	Width 6.22mm
	Automotive Standard No

IPD053N06N OptiMOS Power-Transistor

Vrijgesteld

Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 45A Maximum Continuous Drain Current - IPD053N06NATMA1

This MOSFET is an N‑channel enhancement device designed for high‑current switching in surface‑mounted power assemblies. It operates across a wide ambient range for demanding thermal environments and is intended for applications where low conduction losses and rapid switching are required. The device supports standard drive voltages and provides a controlled forward conduction characteristic suitable for modern power conversion and motor‑drive topologies.

Features and Benefits:

• 8mΩ Rds(on) reduces conduction losses and improves efficiency
• 45A continuous drain current supports high‑current designs
• 27nC typical gate charge enables faster switching transitions
• 83W maximum power dissipation allows high‑power operation
• 20V gate tolerance accommodates common gate‑drive schemes

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for three‑phase motor inverter half‑bridges
• Used with battery management systems in high‑current paths
• Can be used for DC‑DC conversion in telecoms equipment
• Appropriate for load‑switching in industrial automation units

What gate‑drive considerations affect switching performance?

Driving the gate towards the 20V limit reduces on‑resistance but increases switching losses

selecting a driver that balances voltage and slew rate optimises efficiency and electromagnetic behaviour.

How should thermal conditions be managed for continuous operation?

With an 83W dissipation rating, heatsinking and PCB copper area must be sized to maintain junction temperatures within the device’s -55°C to 175°C operational range for reliable long‑term operation.

What mechanical constraints affect PCB layout for this device?

The TO‑252 surface‑mount package requires attention to pad geometry and thermal vias to transfer heat from the solderable package base into the board’s thermal planes.

How does forward voltage influence conduction calculations?

A typical forward voltage of 1.2V should be included when calculating voltage drop and power loss in conduction intervals, particularly under high‑current conditions.