Infineon OptiMOS Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252

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€ 1.067,50

(excl. BTW)

€ 1.292,50

(incl. BTW)

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RS-stocknr.:
222-4667
Fabrikantnummer:
IPD60N10S4L12ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

38nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

94W

Maximum Operating Temperature

175°C

Height

2.3mm

Width

6.22 mm

Length

6.5mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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