Infineon OptiMOS N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2
- RS-stocknr.:
- 222-4666
- Fabrikantnummer:
- IPD50N06S4L08ATMA2
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 15 eenheden)*
€ 17,39
(excl. BTW)
€ 21,03
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- Verzending 11.610 stuk(s) vanaf 14 oktober 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 1,159 | € 17,39 |
| 75 - 135 | € 1,10 | € 16,50 |
| 150 - 360 | € 1,055 | € 15,83 |
| 375 - 735 | € 1,008 | € 15,12 |
| 750 + | € 0,939 | € 14,09 |
*prijsindicatie
- RS-stocknr.:
- 222-4666
- Fabrikantnummer:
- IPD50N06S4L08ATMA2
- Fabrikant:
- Infineon
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S4L08ATMA2
Features and Benefits:
• High continuous current capability of 50A for heavy-load switching
• 60V drain-source rating for mid-voltage system compatibility
• 71W maximum power dissipation for elevated thermal handling
• Typical gate charge 49nC enabling predictable switching behaviour
• Gate-source voltage tolerance up to 16V for flexible drive levels
Applications
• Ideal for DC-DC converters in transportation systems
• Used for motor drive stages requiring high current
• Can be used for battery management and power steering
• Used in high-power switching on surface-mounted assemblies
What temperature range can it operate within?
What package and mounting style does it use?
How many electrical connections does it provide?
What is the forward voltage characteristic under conduction?
What automotive qualification level does it meet?
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