Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2
- RS-stocknr.:
- 222-4666
- Fabrikantnummer:
- IPD50N06S4L08ATMA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 15 eenheden)*
€ 17,385
(excl. BTW)
€ 21,03
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 11.610 stuk(s) vanaf 01 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 1,159 | € 17,39 |
| 75 - 135 | € 1,10 | € 16,50 |
| 150 - 360 | € 1,055 | € 15,83 |
| 375 - 735 | € 1,008 | € 15,12 |
| 750 + | € 0,939 | € 14,09 |
*prijsindicatie
- RS-stocknr.:
- 222-4666
- Fabrikantnummer:
- IPD50N06S4L08ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 71W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 71W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252