Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3

RS-stocknr.:: 180-7944
Fabrikantnummer:: SI2300DS-T1-GE3
Fabrikant:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 25 eenheden)*

€ 5,50

(excl. BTW)

€ 6,75

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Laatste voorraad RS

Laatste 4.675 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
25 - 225	€ 0,22	€ 5,50
250 - 600	€ 0,216	€ 5,40
625 - 1225	€ 0,165	€ 4,13
1250 - 2475	€ 0,132	€ 3,30
2500 +	€ 0,117	€ 2,93

*prijsindicatie

RS-stocknr.:: 180-7944
Fabrikantnummer:: SI2300DS-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	68mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.1W
	Maximum Gate Source Voltage Vgs	12 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Width	2.64 mm
	Height	1.12mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 68mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.1W
	Maximum Gate Source Voltage Vgs 12 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Width 2.64 mm
	Height 1.12mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 12V. It has drain-source resistance of 68mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converter for portable devices

• Load switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested