Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin TO-262 IRFBE30LPBF

RS-stocknr.:: 180-8664
Fabrikantnummer:: IRFBE30LPBF
Fabrikant:: Vishay

Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin TO-262 IRFBE30LPBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 5 eenheden)*

€ 15,96

(excl. BTW)

€ 19,31

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 20 stuk(s) vanaf 07 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 3,192	€ 15,96
50 - 120	€ 2,714	€ 13,57
125 - 245	€ 2,556	€ 12,78
250 - 495	€ 2,396	€ 11,98
500 +	€ 2,234	€ 11,17

*prijsindicatie

RS-stocknr.:: 180-8664
Fabrikantnummer:: IRFBE30LPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-262
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	1.8V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	78nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Standards/Approvals	IEC 61249-2-21, RoHS 2002/95/EC
	Number of Elements per Chip	1
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-262
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 1.8V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 78nC
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay Power MOSFET, 800V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRFBE30LPBF

This power MOSFET is an N-channel transistor designed for high-voltage switching and power conversion tasks in industrial electronics. Housed in a TO-262 package, it serves as a single-element power transistor capable of handling elevated drain-source voltages and sustained power dissipation across a wide thermal range, making it suitable for demanding operating conditions where robust voltage endurance is required.

Features and Benefits:

• 800V drain capability enabling high-voltage switching
• 125W power dissipation allowing sustained thermal load
• 4.1A continuous drain current for moderate-load applications
• 3Ω Rds providing predictable on-resistance characteristics
• 78nC gate charge for controlled switching transitions
• 20V Vgs maximum protecting gate integrity

Applications

• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used with motor drive circuits requiring high Vds
• Can be used for overload protection and snubber circuits
• Useful in power management where an elevated temperature range matters

What temperature extremes can it withstand during operation?

It operates across a wide thermal span from -55°C up to 150°C, suitable for environments with significant temperature variation.

How is gate protection maintained during use?

The maximum permissible gate-to-source voltage is 20V, defining the threshold for safe gate-drive amplitudes to avoid damage.

What package should be considered for thermal and mounting needs?

The TO-262 package provides a robust mounting format with three pins and supports heat dissipation compatible with the device’s 125W rating.

How many active elements are contained on the chip?

The device comprises a single active element per chip, simplifying circuit topology for single-transistor configurations.