Vishay SiHG22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-247 SIHG22N60EF-GE3
- RS-stocknr.:
- 188-4992
- Fabrikantnummer:
- SIHG22N60EF-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 9,49
(excl. BTW)
€ 11,482
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 448 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 4,745 | € 9,49 |
| 20 - 48 | € 4,27 | € 8,54 |
| 50 - 98 | € 4,03 | € 8,06 |
| 100 - 198 | € 3,79 | € 7,58 |
| 200 + | € 3,64 | € 7,28 |
*prijsindicatie
- RS-stocknr.:
- 188-4992
- Fabrikantnummer:
- SIHG22N60EF-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | SiHG22N60EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 182mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Height | 20.82mm | |
| Width | 5.31 mm | |
| Distrelec Product Id | 304-38-849 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series SiHG22N60EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 182mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Height 20.82mm | ||
Width 5.31 mm | ||
Distrelec Product Id 304-38-849 | ||
Automotive Standard No | ||
EF Series Power MOSFET With Fast Body Diode.
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
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