Vishay SiHG105N60EF Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 204-7208
- Fabrikantnummer:
- SIHG105N60EF-GE3
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 204-7208
- Fabrikantnummer:
- SIHG105N60EF-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SiHG105N60EF | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 102mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SiHG105N60EF | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 102mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 20.7mm | ||
Length 15.87mm | ||
Width 5.21 mm | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er)
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