Vishay SiDR626LDP Type N-Channel MOSFET, 204 A, 60 V Enhancement, 8-Pin SO-8 SiDR626LDP-T1-RE3
- RS-stocknr.:
- 210-4957
- Fabrikantnummer:
- SiDR626LDP-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 17,76
(excl. BTW)
€ 21,49
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 5.680 stuk(s) vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 3,552 | € 17,76 |
| 50 - 120 | € 3,196 | € 15,98 |
| 125 - 245 | € 2,592 | € 12,96 |
| 250 - 495 | € 2,234 | € 11,17 |
| 500 + | € 1,918 | € 9,59 |
*prijsindicatie
- RS-stocknr.:
- 210-4957
- Fabrikantnummer:
- SiDR626LDP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 204A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SiDR626LDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.9mm | |
| Height | 0.51mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 204A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SiDR626LDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.9mm | ||
Height 0.51mm | ||
Automotive Standard No | ||
The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8DC package type.
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Top side cooling feature provides additional venue for thermal transfer
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