Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220AB

RS-stocknr.:: 210-4991
Fabrikantnummer:: SIHP15N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220AB

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Subtotaal (1 tube van 50 eenheden)*

€ 76,20

(excl. BTW)

€ 92,20

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,524	€ 76,20
100 - 200	€ 1,433	€ 71,65
250 - 450	€ 1,296	€ 64,80
500 - 1200	€ 1,219	€ 60,95
1250 +	€ 1,143	€ 57,15

*prijsindicatie

RS-stocknr.:: 210-4991
Fabrikantnummer:: SIHP15N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-220AB
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	304mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	53nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	156W
	Maximum Operating Temperature	150°C
	Width	9.96mm
	Standards/Approvals	RoHS
	Length	27.69mm
	Height	4.24mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-220AB
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 304mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 53nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 156W
	Maximum Operating Temperature 150°C
	Width 9.96mm
	Standards/Approvals RoHS
	Length 27.69mm
	Height 4.24mm
	Automotive Standard No

Datasheet - SIHP15N80AE

Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 13A Maximum Continuous Drain Current - SIHP15N80AE-GE3

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-conversion roles in industrial and electronics systems. It is built for through-hole mounting in a TO-220AB package and supports demanding thermal and electrical environments, offering a balance of voltage tolerance and current handling for use in controllers, converters and power stages.

Features and Benefits:

• 800V drain-source voltage enables high-voltage switching applications • 13A continuous drain current supports moderate load currents • 304mΩ on-resistance minimises conduction losses • 156W power dissipation permits substantial thermal throughput • 53nC typical gate charge allows controlled switching dynamics • 30V gate-source limit ensures robust gate-drive margin

Applications

• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive front ends • Used for switched-mode power supply primary switches • Can be used for power-factor correction stages • Used with gate drivers in medium-power inverter designs

What temperature range can it operate within?

It functions across -55°C to 150°C, allowing use in a wide span of ambient and elevated operating temperatures.

Which mounting style does it require for assembly?

It is intended for through-hole installation on a PCB using the TO-220AB package and its three pins.

What gate-drive considerations should be observed?

Keep gate drive within ±30V maximum and account for typical 53nC gate charge when sizing driver current for the desired switching speed.

How should thermal management be handled for reliable operation?

Use a suitable heatsink or thermal Interface to maintain junction temperatures below rated limits given the 156W dissipation capability and application-specific duty cycles.