Infineon OptiMOS Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin TO-252 IPD14N06S280ATMA2

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RS-stocknr.:
214-9031
Fabrikantnummer:
IPD14N06S280ATMA2
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

30W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

8nC

Maximum Operating Temperature

175°C

Length

6.5mm

Height

2.3mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.

It is Automotive AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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