Infineon OptiMOS Type N-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-252 IPD15N06S2L64ATMA2

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RS-stocknr.:
214-9033
Fabrikantnummer:
IPD15N06S2L64ATMA2
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

64mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

47W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.5mm

Width

6.22 mm

Height

2.3mm

Automotive Standard

AEC-Q101

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.

It is Automotive AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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