Infineon OptiMOS-T Type N-Channel MOSFET, 50 A, 120 V Enhancement, 3-Pin TO-252 IPD50N12S3L15ATMA1
- RS-stocknr.:
- 214-9038
- Fabrikantnummer:
- IPD50N12S3L15ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 15,70
(excl. BTW)
€ 19,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 10 | € 1,57 | € 15,70 |
| 20 - 90 | € 1,439 | € 14,39 |
| 100 - 240 | € 1,328 | € 13,28 |
| 250 - 490 | € 1,234 | € 12,34 |
| 500 + | € 1,197 | € 11,97 |
*prijsindicatie
- RS-stocknr.:
- 214-9038
- Fabrikantnummer:
- IPD50N12S3L15ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type TO-252 | ||
Series OptiMOS-T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.
It is Automotive AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
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