Infineon OptiMOS-T Type N-Channel MOSFET, 30 A, 100 V Enhancement, 3-Pin TO-252 IPD30N10S3L34ATMA1
- RS-stocknr.:
- 753-3018
- Fabrikantnummer:
- IPD30N10S3L34ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 8,70
(excl. BTW)
€ 10,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
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Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 20 | € 0,87 | € 8,70 |
| 30 - 120 | € 0,665 | € 6,65 |
| 130 - 620 | € 0,542 | € 5,42 |
| 630 - 1240 | € 0,527 | € 5,27 |
| 1250 + | € 0,515 | € 5,15 |
*prijsindicatie
- RS-stocknr.:
- 753-3018
- Fabrikantnummer:
- IPD30N10S3L34ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 57W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series OptiMOS-T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 57W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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