Infineon OptiMOS-T Type N-Channel MOSFET, 30 A, 100 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 911-4997
- Artikelnummer Distrelec:
- 304-08-789
- Fabrikantnummer:
- IPD30N10S3L34ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 1.112,50
(excl. BTW)
€ 1.345,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 35.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,445 | € 1.112,50 |
*prijsindicatie
- RS-stocknr.:
- 911-4997
- Artikelnummer Distrelec:
- 304-08-789
- Fabrikantnummer:
- IPD30N10S3L34ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS-T | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 6.5mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 30408789 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS-T | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 6.5mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Distrelec Product Id 30408789 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Gerelateerde Links
- Infineon OptiMOS™-T N-Channel MOSFET 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1
- Infineon OptiMOS™-T N-Channel MOSFET 120 V, 3-Pin DPAK IPD70N12S311ATMA1
- Infineon OptiMOS™-T N-Channel MOSFET 120 V, 3-Pin DPAK IPD50N12S3L15ATMA1
- Infineon OptiMOS™-T N-Channel MOSFET 100 V, 3-Pin DPAK IPD35N10S3L26ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 3-Pin DPAK IPD30N03S2L10ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S2L13ATMA4
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 3-Pin DPAK IPD30N08S2L21ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin DPAK IPD30N06S223ATMA2
