Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

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Verpakkingsopties
RS-stocknr.:
220-7404
Fabrikantnummer:
IPD30N06S4L23ATMA2
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

16.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

36W

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Height

2.41mm

Automotive Standard

AEC-Q101

The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩThe new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK.

N-channel - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

world's lowest RDS at 60V (on)

highest current capability

lowest switching and conduction power losses for highest thermal efficiency

robust packages with superior quality and reliability

Optimized total gate charge enables smaller driver output stages

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