Infineon OptiMOS N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

RS-stocknr.:: 220-7403
Fabrikantnummer:: IPD30N06S4L23ATMA2
Fabrikant:: Infineon

Infineon OptiMOS N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

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Subtotaal (2500 eenheden, op een rol van 2500)*

€ 870,00

(excl. BTW)

€ 1.052,50

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 17 december 2026

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Aantal stuks	Per stuk	Per rol*
2500 - 2500	€ 0,348	€ 870,00
5000 +	€ 0,331	€ 827,50

*prijsindicatie

RS-stocknr.:: 220-7403
Fabrikantnummer:: IPD30N06S4L23ATMA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET & Diode
	Channel Type	N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	23mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	16.1nC
	Maximum Power Dissipation Pd	36W
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16V
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22mm
	Height	2.41mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET & Diode
	Channel Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 23mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 16.1nC
	Maximum Power Dissipation Pd 36W
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16V
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Standards/Approvals No
	Width 6.22mm
	Height 2.41mm
	Automotive Standard AEC-Q101

Datasheet - IPD30N06S4L23ATMA2

Infineon OptiMOS Series MOSFET & Diode, 60V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - IPD30N06S4L23ATMA2

This MOSFET & diode is a power switching device designed for high-current applications in demanding electrical environments. It is an N-channel enhancement-mode transistor with an integrated diode, intended for surface-mount deployment in systems requiring robust conduction and thermal tolerance. The component operates across an extended temperature span and is built to meet automotive stress requirements for use in vehicle electronics and industrial controls.

Features and Benefits:

• 60 V rating enables switching of moderate-voltage power rails
• 30 A continuous drain current supports high-current loads
• 23 mΩ Rds(on) minimises conduction losses under load
• 36 W power dissipation allows sustained power handling
• 16.1 nC typical gate charge provides predictable switching behaviour
• 1.3 V forward voltage for efficient diode conduction

Applications

• Suitable for automotive power management modules
• Ideal for DC motor drive stages in vehicles
• Used with high-current converters and regulators
• Can be used for load switching in industrial equipment
• Suitable for surface-mount assemblies requiring thermal endurance

What gate voltage limits must be observed during use?

The device must not be driven beyond ±16 V gate-to-source to prevent gate stress.

What package and mounting style does the component use?

It is supplied in a TO-252 package intended for surface mounting with three pins.

How does the device behave across temperature extremes?

It is specified to operate from −55 °C up to 175 °C for use in wide-temperature environments.

What channel conduction type is implemented and how does it affect activation?

It uses an N-channel enhancement mode, so a positive gate voltage relative to the source is required to turn it on.