Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1

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€ 15,26

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Verpakkingsopties
RS-stocknr.:
222-4681
Fabrikantnummer:
IPG20N10S4L22ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Series

CoolMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

60W

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1V

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101

Length

5.15mm

Width

5.9 mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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