Infineon Dual IPG20 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON
- RS-stocknr.:
- 218-3057
- Fabrikantnummer:
- IPG20N04S408AATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 4.030,00
(excl. BTW)
€ 4.875,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,806 | € 4.030,00 |
*prijsindicatie
- RS-stocknr.:
- 218-3057
- Fabrikantnummer:
- IPG20N04S408AATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPG20 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPG20 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Height 1mm | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon 20V-40V N-Channel Automotive MOSFET. The exposed pad provides excellent thermal transfer (varies by die size).
Dual N-channel Normal Level - Enhancement mode
175°C operating temperature
100% Avalanche tested
Feasible for automatic optical inspection (AOI)
Gerelateerde Links
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S408AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L08AATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S412AATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L11AATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S409ATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG16N10S461AATMA1