Fabrikantnummer

Vishay N-Channel 150 V Type N-Channel MOSFET, 59.7 A, 150 V, 8-Pin SO-8

RS-stocknr.:: 225-9927
Fabrikantnummer:: SIR572DP-T1-RE3
Fabrikant:: Vishay

Vishay N-Channel 150 V Type N-Channel MOSFET, 59.7 A, 150 V, 8-Pin SO-8

Subtotaal (1 rol van 3000 eenheden)*

€ 2.667,00

(excl. BTW)

€ 3.228,00

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,889	€ 2.667,00

*prijsindicatie

RS-stocknr.:: 225-9927
Fabrikantnummer:: SIR572DP-T1-RE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	59.7A
	Maximum Drain Source Voltage Vds	150V
	Series	N-Channel 150 V
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	11.5mΩ
	Maximum Power Dissipation Pd	92.5W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	54nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Height	5.26mm
	Standards/Approvals	No
	Length	6.25mm
	Width	1.12 mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 59.7A
	Maximum Drain Source Voltage Vds 150V
	Series N-Channel 150 V
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 11.5mΩ
	Maximum Power Dissipation Pd 92.5W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 54nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Height 5.26mm
	Standards/Approvals No
	Length 6.25mm
	Width 1.12 mm
	Automotive Standard No

Datasheet - SIR572DP-T1-RE3

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

Vishay N-Channel 150 V Type N-Channel MOSFET, 59.7 A, 150 V, 8-Pin SO-8

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