Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET, 13.1 A, 100 V Enhancement, 8-Pin PowerPAK 1212
- RS-stocknr.:
- 228-2826
- Fabrikantnummer:
- Si7252ADP-T1-GE3
- Fabrikant:
- Vishay
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 228-2826
- Fabrikantnummer:
- Si7252ADP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13.1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 100V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.1nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual N Channel Mosfet | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13.1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 100V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.1nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual N Channel Mosfet | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
PWM optimized
100 % Rg and UIS tested
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