Infineon IPTG Type N-Channel MOSFET, 454 A, 60 V Enhancement, 8-Pin HSOG IPTG007N06NM5ATMA1
- RS-stocknr.:
- 233-4382
- Fabrikantnummer:
- IPTG007N06NM5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 14,74
(excl. BTW)
€ 17,84
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 28 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 7,37 | € 14,74 |
| 20 - 48 | € 6,63 | € 13,26 |
| 50 - 98 | € 6,185 | € 12,37 |
| 100 - 198 | € 5,74 | € 11,48 |
| 200 + | € 5,375 | € 10,75 |
*prijsindicatie
- RS-stocknr.:
- 233-4382
- Fabrikantnummer:
- IPTG007N06NM5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 454A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | HSOG | |
| Series | IPTG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.75mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 216nC | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Width | 8.75mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 454A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type HSOG | ||
Series IPTG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.75mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 216nC | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Width 8.75mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET IPTG007N06NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 60 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board
High efficiency and lower EMI
High performance capability
Gerelateerde Links
- Infineon IPTG Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOG
- Infineon IPTG Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOG
- Infineon IPTG Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOG
- Infineon IPTG Type N-Channel MOSFET 200 V Enhancement, 8-Pin HSOG
- Infineon IPTG Type N-Channel MOSFET 250 V Enhancement, 8-Pin HSOG
- Infineon IPTG Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOG IPTG014N10NM5ATMA1
- Infineon IPTG Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOG IPTG011N08NM5ATMA1
- Infineon IPTG Type N-Channel MOSFET 200 V Enhancement, 8-Pin HSOG IPTG111N20NM3FDATMA1