Fabrikantnummer

Infineon F4 Quad SiC N-Channel MOSFET Module, 100 A, 1200 V AG-EASY2B F411MR12W2M1B76BOMA1

RS-stocknr.:: 234-8960
Fabrikantnummer:: F411MR12W2M1B76BOMA1
Fabrikant:: Infineon

Infineon F4 Quad SiC N-Channel MOSFET Module, 100 A, 1200 V AG-EASY2B F411MR12W2M1B76BOMA1

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RS-stocknr.:: 234-8960
Fabrikantnummer:: F411MR12W2M1B76BOMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	100 A
	Maximum Drain Source Voltage	1200 V
	Package Type	AG-EASY2B
	Series	F4
	Mounting Type	Screw Mount
	Maximum Drain Source Resistance	0.0113 Ω
	Maximum Gate Threshold Voltage	5.55V
	Transistor Material	SiC
	Number of Elements per Chip	4

	Alles selecteren
	Merk Infineon
	Channel Type N
	Maximum Continuous Drain Current 100 A
	Maximum Drain Source Voltage 1200 V
	Package Type AG-EASY2B
	Series F4
	Mounting Type Screw Mount
	Maximum Drain Source Resistance 0.0113 Ω
	Maximum Gate Threshold Voltage 5.55V
	Transistor Material SiC
	Number of Elements per Chip 4

Datasheet - F411MR12W2M1B76BOMA1

The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 100A continuous drain current.

Chassis mount
-40°C to 150°C operating temperature

Infineon F4 Quad SiC N-Channel MOSFET Module, 100 A, 1200 V AG-EASY2B F411MR12W2M1B76BOMA1

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