Infineon IPT N-Channel MOSFET, 454 A, 60 V, 8-Pin HSOF-8 IPT008N06NM5LFATMA1

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€ 6.528,00

(excl. BTW)

€ 7.898,00

(incl. BTW)

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  • Verzending vanaf 03 december 2026
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RS-stocknr.:
236-1584
Fabrikantnummer:
IPT008N06NM5LFATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

454A

Maximum Drain Source Voltage Vds

60V

Package Type

HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.8mΩ

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

185nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

2.4mm

Width

10.58mm

Length

10.1mm

Automotive Standard

No

Infineon IPT Series MOSFET, 60V Maximum Drain Source Voltage, 454A Maximum Continuous Drain Current - IPT008N06NM5LFATMA1


This MOSFET is a high-current switching transistor designed for surface-mounted power applications, offering robust thermal tolerance and substantial current capability for demanding circuits. It operates across a wide ambient range and is suited to systems requiring low conduction loss and significant power handling within a Compact package.

Features and Benefits:


• 60 V maximum drain voltage delivers high-voltage switching capability
• 454 A continuous drain current supports heavy current loads
• 0.8 mΩ maximum RDS(on) reduces conduction losses in power paths
• 278 W maximum power dissipation allows sustained high-power operation
• 185 nC typical gate charge enables predictable switching control
• ±20 V gate-source rating permits broad gate drive margins

Applications


• Suitable for high-current motor-drive stages
• Can be used for DC-DC converter output switches
• Ideal for power distribution in server power supplies
• Used with battery-management modules handling large currents
• Suitable for industrial inverter switching stages

What thermal endurance can be expected in harsh environments?


It is rated to operate from −55 °C up to 150 °C, allowing use in wide temperature conditions.

How does the package influence mounting and layout?


The HSOF-8 surface-mount package facilitates Compact PCB placement and low-inductance connections for power traces.

What gate-drive considerations are necessary for switching?


Design gate drivers to supply sufficient charge for the 185 nC gate to achieve required switching speeds while respecting the ±20 V gate-source limit.

How should designers manage power dissipation in high-load scenarios?


Ensure PCB copper area and thermal vias are sized to handle the 278 W dissipation and maintain junction temperatures within limits.

What conduction performance can be expected during continuous operation?


Expect low on-state voltage drop due to the 0.8 mΩ maximum drain-source resistance, benefiting efficiency in continuous high-current conditions.

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