Vishay N-Channel MOSFET, 415 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3
- RS-stocknr.:
- 239-8614
- Fabrikantnummer:
- SiDR220EP-T1-RE3
- Fabrikant:
- Vishay
Subtotaal (3000 eenheden, op een rol van 3000)*
€ 4.329,00
(excl. BTW)
€ 5.238,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 3.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 1,443 | € 4.329,00 |
*prijsindicatie
- RS-stocknr.:
- 239-8614
- Fabrikantnummer:
- SiDR220EP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 415A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00082Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Maximum Power Dissipation Pd | 120W | |
| Maximum Operating Temperature | 125°C | |
| Width | 5.15mm | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 415A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00082Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Maximum Power Dissipation Pd 120W | ||
Maximum Operating Temperature 125°C | ||
Width 5.15mm | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 25 V and 175 °C temperature. This MOSFET used for high power density, synchronous buck converter and load switching.
Top side cooling feature provides additional venue for thermal transfer
Low power loss
UIS tested
Gerelateerde Links
- Vishay N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3
- Vishay N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SIDR104AEP-T1-RE3
- Vishay N-Channel MOSFET 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR610EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5802EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR570EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5102EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR578EP-T1-RE3