Vishay E Type N-Channel Power MOSFET, 48 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3

RS-stocknr.:: 239-8634
Fabrikantnummer:: SIHK045N60E-T1-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 48 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3

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RS-stocknr.:: 239-8634
Fabrikantnummer:: SIHK045N60E-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	48A
	Maximum Drain Source Voltage Vds	650V
	Series	E
	Package Type	PowerPAK 10 x 12
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.043Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	98nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	278W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 48A
	Maximum Drain Source Voltage Vds 650V
	Series E
	Package Type PowerPAK 10 x 12
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.043Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 98nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 278W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK045N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 48A Continuous Drain Current - SIHK045N60E-T1-GE3

This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power management in demanding electrical systems. It operates across a wide temperature range and is intended for surface-mounted assemblies where automotive-level reliability and high continuous current handling are required.

Features and Benefits:

• 650V drain voltage enabling high-voltage switching applications • 48A continuous drain current supporting heavy current loads • 0.043Ω Rds(on) reducing conduction losses under load • 98nC typical gate charge allowing predictable drive requirements • 278W maximum power dissipation for substantial thermal handling • AEC-Q101 qualification meeting automotive stress screening needs

Applications

• Suitable for traction inverter and motor-control stages in vehicles • Ideal for high-voltage power converters in industrial automation • Used for DC-DC conversion in high-power electrical systems • Can be used for switch-mode power supplies in demanding environments

What gate drive considerations should I allow for?

Design gate drivers to deliver around the typical 98nC charge at the chosen Vgs to ensure switching speed meets system timing while limiting switching losses.

How should thermal management be approached on PCB assemblies?

Use the PowerPAK 10x12 surface package heat-spreading and provision for adequate copper area and vias to dissipate up to 278W under defined cooling conditions.

What voltage margins are appropriate for safety design?

Select system operating voltages well below the 650V maximum drain-source rating and limit gate excursions within the ±30V gate-source constraint.

Are there environmental temperature constraints for operation?

The device functions from -55°C up to +150°C junction temperature, so system cooling and derating must account for high-temperature operating points.