Vishay E Type N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

RS-stocknr.:: 239-8638
Fabrikantnummer:: SIHK125N60E-T1-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

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€ 13,128

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20 - 48	€ 5,10	€ 10,20
50 - 98	€ 4,61	€ 9,22
100 - 198	€ 4,345	€ 8,69
200 +	€ 4,07	€ 8,14

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RS-stocknr.:: 239-8638
Fabrikantnummer:: SIHK125N60E-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.109Ω
	Channel Mode	Depletion
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	54nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	132W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.109Ω
	Channel Mode Depletion
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 54nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 132W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK125N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 21A Continuous Drain Current - SIHK125N60E-T1-GE3

This power MOSFET is a high-voltage N-channel transistor designed for demanding electronic and automotive applications. It functions as a depletion-mode switch to control high-voltage circuits and is suitable for surface-mount assembly in systems requiring robust thermal and electrical performance. The device operates across a wide temperature range and conforms to automotive quality standards for use in vehicle electronics.

Features and Benefits:

• 650V drain voltage enabling high-voltage system switching • 21A continuous drain current for sustained load handling • 0.109Ω Rds(on) for reduced conduction losses • 132W power dissipation supporting elevated thermal loads • 54nC typical gate charge allowing predictable switching energy • ±30V gate tolerance for robust gate-drive margin

Applications

• Suitable for automotive power conversion and inverter stages • Ideal for high-voltage motor drive front-ends • Used for industrial automation high-voltage switching • Can be used for power supplies in electrical systems

What operating temperature range can I expect for reliability?

The device supports continuous operation from -55°C up to +150°C allowing use in environments with wide thermal variation.

How does the package influence thermal performance on a PCB?

The surface-mount PowerPAK 10x12 package provides a low thermal resistance path to the board, aiding heat transfer when soldered to appropriate PCB copper areas.

What gate-drive considerations should I allow for switching?

With a typical gate charge of 54nC and a maximum gate-source rating of ±30V, gate drivers must supply sufficient charge and respect the voltage limit to control switching speed safely.

Are there industry standards applicable to this component?

The device meets AEC-Q101 requirements and is RoHS-compliant, aligning it with automotive-grade component selection criteria.