Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN
- RS-stocknr.:
- 241-9704
- Fabrikantnummer:
- BSZ039N06NSATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 2.415,00
(excl. BTW)
€ 2.920,00
(incl. BTW)
Voeg 5000 eenheden toe voor gratis bezorging
Laatste voorraad RS
- Laatste 5.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,483 | € 2.415,00 |
*prijsindicatie
- RS-stocknr.:
- 241-9704
- Fabrikantnummer:
- BSZ039N06NSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS Power Transistor is a N channel MOSFET which is fully qualified according to JEDEC for Industrial Applications. It has Higher solder joint reliability due to enlarged source interconnection.
Optimized for high performance SMPS
Superior thermal resistance
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