Infineon Dual N Channel OptiMOSTM 2 Type N-Channel MOSFET & Diode, 40 A, 30 V, 8-Pin SuperSO8 5 x 6 BSC0924NDIATMA1
- RS-stocknr.:
- 244-1559
- Fabrikantnummer:
- BSC0924NDIATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,53
(excl. BTW)
€ 5,48
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 4.805 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 0,906 | € 4,53 |
| 25 - 45 | € 0,862 | € 4,31 |
| 50 - 120 | € 0,776 | € 3,88 |
| 125 - 245 | € 0,696 | € 3,48 |
| 250 + | € 0,664 | € 3,32 |
*prijsindicatie
- RS-stocknr.:
- 244-1559
- Fabrikantnummer:
- BSC0924NDIATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOSTM | |
| Package Type | SuperSO8 5 x 6 | |
| Pin Count | 8 | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual N Channel | |
| Standards/Approvals | JEDEC1, IEC61249-2-22 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOSTM | ||
Package Type SuperSO8 5 x 6 | ||
Pin Count 8 | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual N Channel | ||
Standards/Approvals JEDEC1, IEC61249-2-22 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon has MOSFET which is OptiMOS power MOSFET,Integrated monolithic Schottky-like diode and Optimized for high performance Buck converter.
N Channel
100% Avalanche tested
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
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