Infineon HEXFET N-Channel MOSFET, 56 A, 100 V TO-252 IRFR3710ZTRPBF
- RS-stocknr.:
- 257-5855
- Artikelnummer Distrelec:
- 304-40-539
- Fabrikantnummer:
- IRFR3710ZTRPBF
- Fabrikant:
- Infineon
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,732 | € 13,66 |
| 25 - 45 | € 2,46 | € 12,30 |
| 50 - 120 | € 2,292 | € 11,46 |
| 125 - 245 | € 2,132 | € 10,66 |
| 250 + | € 1,092 | € 5,46 |
*prijsindicatie
- RS-stocknr.:
- 257-5855
- Artikelnummer Distrelec:
- 304-40-539
- Fabrikantnummer:
- IRFR3710ZTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Height | 10.41mm | |
| Standards/Approvals | RoHS | |
| Width | 2.39mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Height 10.41mm | ||
Standards/Approvals RoHS | ||
Width 2.39mm | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced process technology
Ultra low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Multiple package options
Lead-free
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