Infineon HEXFET Type N-Channel MOSFET, 56 A, 55 V TO-252

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Subtotaal (1 rol van 3000 eenheden)*

€ 1.209,00

(excl. BTW)

€ 1.464,00

(incl. BTW)

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  • Verzending vanaf 16 maart 2026
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RS-stocknr.:
258-3983
Fabrikantnummer:
IRFR2405TRLPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

16mΩ

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

70nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon R MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Increased ruggedness

Wide availability from distribution partners

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