Infineon HEXFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN IRFH5301TRPBF
- RS-stocknr.:
- 257-5887
- Fabrikantnummer:
- IRFH5301TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (5 eenheden, in een pakket van 5)*
€ 10,50
(excl. BTW)
€ 12,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 3.630 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,10 | € 10,50 |
| 50 - 120 | € 1,872 | € 9,36 |
| 125 - 245 | € 1,768 | € 8,84 |
| 250 - 495 | € 1,33 | € 6,65 |
| 500 + | € 1,296 | € 6,48 |
*prijsindicatie
- RS-stocknr.:
- 257-5887
- Fabrikantnummer:
- IRFH5301TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.85mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5mm | |
| Height | 900μm | |
| Standards/Approvals | RoHS | |
| Length | 6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.85mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 5mm | ||
Height 900μm | ||
Standards/Approvals RoHS | ||
Length 6mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
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