Infineon iPB N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263 IPB020N10N5LFATMA1

RS-stocknr.:: 258-3785
Fabrikantnummer:: IPB020N10N5LFATMA1
Fabrikant:: Infineon

Infineon iPB N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263 IPB020N10N5LFATMA1

Subtotaal (1 rol van 1000 eenheden)*

€ 2.862,00

(excl. BTW)

€ 3.463,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Plus verzending 1.000 stuk(s) vanaf 02 november 2026

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Aantal stuks	Per stuk	Per rol*
1000 +	€ 2,862	€ 2.862,00

*prijsindicatie

RS-stocknr.:: 258-3785
Fabrikantnummer:: IPB020N10N5LFATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	100V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	313W
	Forward Voltage Vf	890mV
	Typical Gate Charge Qg @ Vgs	195nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS, IEC 61249-2-21
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 100V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 313W
	Forward Voltage Vf 890mV
	Typical Gate Charge Qg @ Vgs 195nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS, IEC 61249-2-21
	Automotive Standard No

Datasheet - IPB020N10N5LFATMA1

Infineon iPB Series MOSFET, 100V Maximum Drain-Source Voltage, 120A Maximum Continuous Drain Current - IPB020N10N5LFATMA1

This MOSFET is a high-current N-channel power transistor designed for surface-mounted power switching in demanding thermal environments. It operates across a wide ambient range and provides strong conduction performance for applications requiring substantial continuous drain current and moderate gate-drive energy.

Features and Benefits:

• Low on-resistance reduces conduction losses for high-current operation
• High power dissipation enables sustained load handling at elevated dissipation
• Robust drain-source voltage rating allows safe switching up to 100V
• Large continuous drain current capacity supports heavy-current systems
• Moderate gate charge balances switching speed and gate-drive demands

Applications

• Suitable for high-current DC power distribution blocks
• Ideal for switch-mode power supplies in Compact systems
• Used with motor drivers requiring 100V tolerances
• Can be used for server and telecoms power stages
• Suitable for industrial converters operating at elevated temperatures

What ambient temperatures can it tolerate?

It functions over a broad range from -55°C to 150°C, supporting both cold-start and high-temperature operation.

How is it packaged for PCB assembly?

It is supplied in a TO-263 surface-mount package intended for board-mounted power installations.

What gate-drive considerations apply for switching performance?

The typical total gate charge is 195 nC, which informs gate-driver current and switching timing requirements.

What safety limits govern gate-to-source excursions?

The maximum permissible gate-source voltage is 20V and should not be exceeded to avoid device stress.