Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2

RS-stocknr.:: 258-3845
Fabrikantnummer:: IPD50P04P4L11ATMA2
Fabrikant:: Infineon

Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 2 eenheden)*

€ 3,26

(excl. BTW)

€ 3,94

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 1.800 stuk(s) vanaf 02 november 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
2 - 18	€ 1,63	€ 3,26
20 - 48	€ 1,465	€ 2,93
50 - 98	€ 1,385	€ 2,77
100 - 198	€ 1,29	€ 2,58
200 +	€ 1,195	€ 2,39

*prijsindicatie

RS-stocknr.:: 258-3845
Fabrikantnummer:: IPD50P04P4L11ATMA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-50A
	Maximum Drain Source Voltage Vds	-40V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	10.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	58W
	Typical Gate Charge Qg @ Vgs	45nC
	Forward Voltage Vf	-1V
	Maximum Gate Source Voltage Vgs	5V
	Maximum Operating Temperature	175°C
	Standards/Approvals	DIN IEC 68-1, RoHS
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -50A
	Maximum Drain Source Voltage Vds -40V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 10.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 58W
	Typical Gate Charge Qg @ Vgs 45nC
	Forward Voltage Vf -1V
	Maximum Gate Source Voltage Vgs 5V
	Maximum Operating Temperature 175°C
	Standards/Approvals DIN IEC 68-1, RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD50P04P4L11ATMA2

Infineon IPD Series MOSFET, 40V Drain-Source Voltage, 58W Power Dissipation - IPD50P04P4L11ATMA2

This MOSFET is a P-channel power transistor intended for high-current switching in surface-mounted assemblies. It operates across a wide ambient range and is designed for demanding temperature environments, making it suitable for applications where thermal endurance and Compact packaging matter.

Features and Benefits:

• Low Rds(on) 10.6mΩ reduces conduction losses
• Continuous drain current -50A supports high-current loads
• Gate charge 45nC allows predictable switching energy
• Maximum Vgs 5V ensures safe gate drive limits
• TO-252 surface mount enables Compact board layouts

Applications

• Suitable for automotive power distribution modules
• Ideal for high-current polarity switching circuits
• Used with thermal management for extended-temperature systems
• Can be used for DC power control in vehicle electronics

What temperature extremes can it withstand?

It is rated to operate from -55°C up to 175°C.

What packaging and mount type does it use?

It is supplied in a TO-252 package intended for surface mounting.

How does the device perform under high-power conditions?

It allows up to 58W dissipation, enabling sustained power handling with appropriate thermal management.

Are there limits for the drain-source voltage and gate drive?

The device specifies a maximum drain-source voltage of -40V and a maximum gate-source of 5V.