Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN

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RS-stocknr.:
258-3971
Fabrikantnummer:
IRFH8303TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

280A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Typical Gate Charge Qg @ Vgs

58nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

156W

Maximum Operating Temperature

150°C

Width

5 mm

Length

6mm

Height

0.9mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Softer body-diode compared to previous silicon generation

Wide portfolio available

Increased power density

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