Infineon HEXFET N-Channel MOSFET, 1.9 A, 150 V Enhancement, 8-Pin SO-8 IRF7465TRPBF
- RS-stocknr.:
- 262-6736
- Artikelnummer Distrelec:
- 304-41-668
- Fabrikantnummer:
- IRF7465TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (25 eenheden, in een pakket van 25)*
€ 17,95
(excl. BTW)
€ 21,73
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 3.975 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 100 | € 0,718 | € 17,95 |
| 125 - 225 | € 0,682 | € 17,05 |
| 250 - 600 | € 0,652 | € 16,30 |
| 625 - 1225 | € 0,625 | € 15,63 |
| 1250 + | € 0,415 | € 10,38 |
*prijsindicatie
- RS-stocknr.:
- 262-6736
- Artikelnummer Distrelec:
- 304-41-668
- Fabrikantnummer:
- IRF7465TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 4mm | |
| Length | 5mm | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 4mm | ||
Length 5mm | ||
Height 1.75mm | ||
Automotive Standard No | ||
The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.
Fully characterized avalanche voltage and current
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