Vishay E Type N-Channel Power MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263

RS-stocknr.:: 279-9903
Fabrikantnummer:: SIHB150N60E-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263

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Subtotaal (1 tube van 50 eenheden)*

€ 122,60

(excl. BTW)

€ 148,35

(incl. BTW)

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 2,452	€ 122,60
100 +	€ 2,18	€ 109,00

*prijsindicatie

RS-stocknr.:: 279-9903
Fabrikantnummer:: SIHB150N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	22A
	Maximum Drain Source Voltage Vds	600V
	Series	E
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.137Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	179W
	Typical Gate Charge Qg @ Vgs	36nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	10.67mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 22A
	Maximum Drain Source Voltage Vds 600V
	Series E
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.137Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 179W
	Typical Gate Charge Qg @ Vgs 36nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 10.67mm
	Automotive Standard No

Datasheet - SIHB150N60E-GE3

Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 22A Maximum Continuous Drain Current - SIHB150N60E-GE3

This power MOSFET is a high-voltage switching transistor designed for use in power conversion and control circuits within industrial and automation environments. It operates as an enhancement-mode N-channel device in a surface-mount TO-263 package, offering a practical footprint for assemblies that require robust high-voltage switching while withstanding a wide temperature range.

Features and Benefits:

• 600V drain rating enables high-voltage switching applications • 22A continuous drain current allows sustained load handling • 0.137Ω Rds(on) reduces conduction losses under load • 179W power dissipation supports higher power stages • 36nC typical gate charge facilitates manageable switching losses • 30V gate voltage rating allows broad gate-drive flexibility

Applications

• Suitable for switch-mode power supplies requiring high-voltage transistors • Ideal for motor drives in industrial automation systems • Used for inverter stages in power conversion modules • Can be used for high-voltage relay replacement in control gear • Used with power assemblies operating at elevated temperatures

What temperature range can the device tolerate during operation?

It is specified to operate down to -55°C and up to 150°C ambient extremes, suitable for harsh industrial thermal conditions.

How many terminals does the package provide and what mounting style is used?

The device has three pins and is supplied in a surface-mount TO-263 package for PCB assembly.

What maximum gate drive should be applied to the gate electrode?

The gate-source voltage must not exceed 30V to prevent gate overstress.

What is the typical switching characteristic to consider for drive design?

The gate charge is 36nC, which should be factored into driver sizing to control switching transitions and losses.