Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3

Bekijk alle MOSFETs
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
Verpakkingsopties
RS-stocknr.:
268-8295
Fabrikantnummer:
SIHB6N80AE-GE3
Fabrikant:
Vishay
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Series

SIHB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.95Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

10.67mm

Automotive Standard

No

Land van herkomst:
CN
The Vishay E series power MOSFET has low switching and conduction losses, it is used in applications such as switch mode power supplies, server power supplies, and power factor correction power supplies. It has integrated zener diode for ESD protection.

Low effective capacitance

Avalanche energy rated

Low figure of merit

Gerelateerde Links