Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3

RS-stocknr.:: 268-8291
Fabrikantnummer:: SIHB085N60EF-GE3
Fabrikant:: Vishay

Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3

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Subtotaal (1 tube van 50 eenheden)*

€ 199,00

(excl. BTW)

€ 241,00

(incl. BTW)

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Verzending 1.000 stuk(s) vanaf 23 juli 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 3,98	€ 199,00
100 - 450	€ 3,255	€ 162,75
500 - 950	€ 2,77	€ 138,50
1000 +	€ 2,698	€ 134,90

*prijsindicatie

RS-stocknr.:: 268-8291
Fabrikantnummer:: SIHB085N60EF-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Series	SIHB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.084Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	184W
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Series SIHB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.084Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 184W
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB085N60EF-GE3

Land van herkomst:: CN

Vishay SIHB Series MOSFET, 650V Maximum Drain Source Voltage, 34A Maximum Continuous Drain Current - SIHB085N60EF-GE3

This high-voltage N-channel MOSFET is designed for power switching in demanding industrial and electronic systems. It functions as an enhancement-mode transistor suitable for surface-mount assembly in applications requiring robust voltage handling and elevated thermal tolerance. The device supports conventional gate drive levels and is intended for use where controlled conduction and Rapid switching are required.

Features and Benefits:

• 650V drain rating for high-voltage switching capability
• 34A continuous drain current for heavy-load operation
• 0.084Ω Rds(on) minimises conduction losses in circuits
• 184W power dissipation allows sustained thermal load handling
• 63nC typical gate charge for switching performance optimisation
• 30V gate tolerance supports standard gate-drive voltages

Applications

• Suitable for high-voltage SMPS primary-side switching
• Ideal for industrial motor drive inverter stages
• Used for power factor correction front-end switches
• Can be used for high-voltage relay and contactor driver circuits

What temperature range can it operate within?

It is rated to operate down to -55°C and up to a maximum of 150°C, enabling use across wide thermal environments.

How is the package suited to assembly processes?

The device is supplied in a TO-263 surface-mount package with three pins, facilitating automated solder mounting and thermal management on power PCBs.

What is the gate drive requirement limit?

The maximum permissible gate-to-source voltage is 30V, so gate-drive circuitry should be designed to remain within this threshold.

Does the component follow any environmental directives?

It conforms to RoHS requirements, indicating the absence of certain restricted substances in its construction.