Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3
- RS-stocknr.:
- 268-8289
- Fabrikantnummer:
- SIHB080N60E-GE3
- Fabrikant:
- Vishay
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 268-8289
- Fabrikantnummer:
- SIHB080N60E-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | SIHB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.08Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series SIHB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.08Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp
Low effective capacitance
Avalanche energy rated
Low figure of merit
Gerelateerde Links
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SIHB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- Vishay SIHB Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3
- Vishay SiHB105N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB105N60EF-GE3
- Vishay SiHB068N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB068N60EF-GE3
- Vishay SiHB125N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3