Vishay SIS9446DN 2 Type N-Channel MOSFET, 34 A, 40 V Enhancement, 8-Pin 1212-8 SIS9446DN-T1-GE3
- RS-stocknr.:
- 279-9976
- Fabrikantnummer:
- SIS9446DN-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.560,00
(excl. BTW)
€ 1.890,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,52 | € 1.560,00 |
*prijsindicatie
- RS-stocknr.:
- 279-9976
- Fabrikantnummer:
- SIS9446DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SIS9446DN | |
| Package Type | 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | 100 percent Rg and UIS tested, AEC-Q101, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SIS9446DN | ||
Package Type 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals 100 percent Rg and UIS tested, AEC-Q101, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay MOSFET is a Dual N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Reduces switching related power loss
Fully lead (Pb)-free device
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